Permanent Photoresist for MEMS (TMMR S2000 / TMMF S2000)
|
| Outstanding Features |
| 1. |
Ultrathick film offering an incredibly wide range of thicknesses (5-700 µm) |
| 2. |
Enables patterning with high aspect ratios topping 20 |
| 3. |
Excellent resistance to chemicals allowing use in various kinds of applications |
| 4. |
Great thermal resistance affording applicability for various kinds of processes |
|
»High Aspect Ratio Performance Photoresist
• Profiles of Photoresist Pattern (500 times) |
| 10 µm Line |
10 µm Dot |
 |
 |
|
 |
|
|
|
Film Thickness: |
130 µm |
|
Exposure Dose: |
400 mJ/cm |
|
P.E.B.: |
90°C, 10 min. |
|
Development: |
PM Thinner, 23°C, 30 min. |
|
»Super Thick Film Photoresist
• Profiles of Photoresist Pattern |
| Film Thickness: 600 µm |
 |
| L/S= 200/400 µm |
|
|
|
|
|
|
Coater: |
CS-A (TOK) |
|
Prebake: |
120°C, 6 hrs. |
|
Exposure Dose: |
1500 mJ/cm |
|
P.E.B.: |
D. H. P., 90°C, 5 min. |
|
Development: |
PM Thinner, 23°C, 2 hrs. |
|
|
|
|
|
|
Wafer Size: |
150 mm |
|
»Hollow Structure Photoresist
• Profiles of Photoresist Pattern |
|
|
|
TMMF S2000 |
|
|
Exposure Dose: |
300 mJ/cm |
|
P.E.B.: |
90°C, 5 min. |
|
Development: |
PM Thinner, 23°C, 8 min. |
|
|
|
|
TMMR S2000 |
|
|
Coater: |
CS-A (TOK) |
|
Prebake: |
120°C, 20 min. |
|
Exposure Dose: |
400 mJ/cm |
|
P.E.B.: |
90°C, 10 min. |
|
Development: |
PM Thinner, 23°C, 30 min. |
|
|
| |
• Tenting Method |
|
|
|
|
|
| Contact |
» |
PDP Packaging Material Marketing Division
TEL. +81-44-435-3002 FAX. +81-44-435-3022 |
|
» |
Business Hours 8:45 - 12:00 13:00 - 17:30 in Japan (Except for Saturday, Sunday, National Holidays and Our Company Holidays) |
|
|
